1N4935GH
vs
BYV26A
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Package Description |
DO-41, 2 PIN
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Application |
EFFICIENCY
|
SUPER FAST RECOVERY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
2.5 V
|
| JEDEC-95 Code |
DO-204AL
|
DO-41
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| Non-rep Pk Forward Current-Max |
30 A
|
30 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Reference Standard |
AEC-Q101
|
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Current-Max |
5 µA
|
5 µA
|
| Reverse Recovery Time-Max |
0.2 µs
|
0.035 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
5
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reverse Test Voltage |
|
200 V
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N4935GH with alternatives
Compare BYV26A with alternatives