1N4934GPPPBFREE
vs
SFT12GA1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Date Of Intro
2018-09-26
Application
FAST RECOVERY
GENERAL PURPOSE
Breakdown Voltage-Min
100 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.3 V
0.95 V
JEDEC-95 Code
DO-41
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
30 A
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
1 A
1 A
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.2 µs
0.035 µs
Reverse Test Voltage
100 V
Surface Mount
NO
NO
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
10
Base Number Matches
1
1
Rohs Code
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Compare 1N4934GPPPBFREE with alternatives
Compare SFT12GA1 with alternatives