1N4797
vs
V956
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
TELCOM SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Min |
15 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance Ratio-Min |
2.32
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Quality Factor-Min |
750
|
15
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
11
|
7
|
| Rohs Code |
|
No
|
| ECCN Code |
|
EAR99
|
| Diode Capacitance-Nom |
|
56 pF
|
| JESD-609 Code |
|
e0
|
| Rep Pk Reverse Voltage-Max |
|
17 V
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|