1N4787
vs
1N4787
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
KNOX SEMICONDUCTORS INC
Package Description
O-LALF-W2
O-LALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH Q, LOW LEAKAGE
Breakdown Voltage-Min
25 V
28 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Cap Tolerance
20%
20%
Diode Capacitance Ratio-Min
2.42
2.42
Diode Capacitance-Nom
8.2 pF
8.2 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
JEDEC-95 Code
DO-7
DO-7
JESD-30 Code
O-LALF-W2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.4 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
15
15
Rep Pk Reverse Voltage-Max
25 V
25 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Variable Capacitance Diode Classification
ABRUPT
ABRUPT
Base Number Matches
5
1
Rohs Code
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
0.005 µA
Reverse Test Voltage
25 V
Terminal Finish
TIN LEAD
Compare 1N4787 with alternatives
Compare 1N4787 with alternatives