1N4786
vs
1N4786
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INTERNATIONAL SEMICONDUCTOR INC
|
API TECHNOLOGIES CORP
|
| Package Description |
O-LALF-W2
|
O-LALF-W2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
HIGH Q, LOW LEAKAGE
|
|
| Breakdown Voltage-Min |
25 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Cap Tolerance |
20%
|
20%
|
| Diode Capacitance Ratio-Min |
2.4
|
2.0747
|
| Diode Capacitance-Nom |
6.8 pF
|
6.8 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| JEDEC-95 Code |
DO-7
|
DO-7
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.4 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Quality Factor-Min |
15
|
15
|
| Rep Pk Reverse Voltage-Max |
25 V
|
25 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
5
|
4
|
| Operating Temperature-Max |
|
175 °C
|
| Reverse Current-Max |
|
5e-9 µA
|
| Reverse Test Voltage |
|
25 V
|
|
|
|
Compare 1N4786 with alternatives
Compare 1N4786 with alternatives