1N4762AA1G
vs
U1ZB82A
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
200 Ω
|
170 Ω
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Voltage-Nom |
82 V
|
82 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
ZENER
|
|
| Terminal Finish |
MATTE TIN
|
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
3 mA
|
3 mA
|
| Base Number Matches |
1
|
2
|
|
|
|
Compare 1N4762AA1G with alternatives
Compare U1ZB82A with alternatives