1N4757AR0
vs
ZGFM1051B-M-H
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
FORMOSA MICROSEMI CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
95 Ω
|
95 Ω
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Voltage-Nom |
51 V
|
51 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
MATTE TIN
|
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
30
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
5 mA
|
5 mA
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare 1N4757AR0 with alternatives
Compare ZGFM1051B-M-H with alternatives