1N4757A-PT/R
vs
1N4757AR1G
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
95 Ω
|
95 Ω
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Voltage-Nom |
51 V
|
51 V
|
| Surface Mount |
NO
|
NO
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
5 mA
|
5 mA
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
Yes
|
| Diode Element Material |
|
SILICON
|
| JESD-609 Code |
|
e3
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Technology |
|
ZENER
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare 1N4757A-PT/R with alternatives
Compare 1N4757AR1G with alternatives