1N4757A vs MV1N4757APE3 feature comparison

1N4757A TDK Micronas GmbH

Buy Now Datasheet

MV1N4757APE3 Microsemi Corporation

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ITT SEMICONDUCTOR MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 95 Ω
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Knee Impedance-Max 1500 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 150 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 51 V 51 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 68 1
Part Package Code DO-41
Package Description O-PALF-W2
Pin Count 2
JEDEC-95 Code DO-204AL
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C

Compare 1N4757A with alternatives

Compare MV1N4757APE3 with alternatives