1N4750A vs 1N3030B feature comparison

1N4750A Taiwan Semiconductor

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1N3030B Motorola Semiconductor Products

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MOTOROLA INC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Case Connection ISOLATED CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 35 Ω 35 Ω
JEDEC-95 Code DO-41 DO-13
JESD-30 Code O-PALF-W2 O-MALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 27 V 27 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 9.5 mA 9.5 mA
Base Number Matches 18 3
Knee Impedance-Max 750 Ω
Reverse Current-Max 0.5 µA

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