1N4747A-GT3
vs
1N4747A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
FORMOSA MICROSEMI CO LTD
Package Description
O-LALF-W2
Reach Compliance Code
unknown
unknown
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
DO-41
JESD-30 Code
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
Package Body Material
GLASS
Package Shape
ROUND
Package Style
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Reference Voltage-Nom
20 V
20 V
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Form
WIRE
Terminal Position
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Voltage Tol-Max
5%
5%
Working Test Current
12.5 mA
12.5 mA
Base Number Matches
1
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Dynamic Impedance-Max
22 Ω
Operating Temperature-Max
175 °C
Compare 1N4747A-GT3 with alternatives
Compare 1N4747A with alternatives