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1N4747A vs 1N4747AAMO feature comparison

1N4747A Hitachi Ltd

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1N4747AAMO NXP Semiconductors

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer HITACHI LTD NXP SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 22 Ω
JEDEC-95 Code DO-41
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 20 V 20 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 12.5 mA 12.5 mA
Base Number Matches 1 1
Package Description O-LALF-W2
Diodes » Zener Diodes
Diodes » Zener Diodes

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Compare 1N4747AAMO with alternatives