1N4737A-G vs 1N4737APE3/TR feature comparison

1N4737A-G Sangdest Microelectronics (Nanjing) Co Ltd

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1N4737APE3/TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description O-LALF-W2 O-PALF-W2
Reach Compliance Code unknown compliant
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-LALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 7.5 V 7.5 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 5% 5%
Working Test Current 34 mA 34 mA
Base Number Matches 8 1
ECCN Code EAR99
HTS Code 8541.10.00.50
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Terminal Finish MATTE TIN

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