1N4488US
vs
1N6488E3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
compliant
|
compliant
|
| Factory Lead Time |
28 Weeks
|
|
| Additional Feature |
METALLURGICALLY BONDED
|
METALLURGICALLY BONDED
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1.5 W
|
1.5 W
|
| Reference Voltage-Nom |
91 V
|
4.3 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
WRAP AROUND
|
WIRE
|
| Terminal Position |
END
|
AXIAL
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
2.8 mA
|
58 mA
|
| Base Number Matches |
5
|
1
|
| Package Description |
|
O-LALF-W2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Dynamic Impedance-Max |
|
9 Ω
|
| JEDEC-95 Code |
|
DO-41
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
|
|
|
Compare 1N4488US with alternatives
Compare 1N6488E3 with alternatives