1N4448WT vs 1N4448W-7-F feature comparison

1N4448WT Galaxy Semi-Conductor Co Ltd

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1N4448W-7-F Diodes Incorporated

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Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD DIODES INC
Package Description R-PDSO-F2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-G2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Power Dissipation-Max 0.15 W 0.4 W
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 12 1
Pbfree Code Yes
Rohs Code Yes
Pin Count 2
Factory Lead Time 18 Weeks, 3 Days
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Forward Voltage-Max (VF) 0.72 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 2 A
Operating Temperature-Min -65 °C
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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