1N4448WS-AU_R1_000A1
vs
1N4448WSRR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
EFFICIENCY
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
0.2 A
0.15 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max
0.25 W
0.2 W
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Surface Mount
YES
YES
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Additional Feature
LOW POWER LOSS
Forward Voltage-Max (VF)
1 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
Reverse Test Voltage
75 V
Terminal Finish
MATTE TIN
Compare 1N4448WS-AU_R1_000A1 with alternatives
Compare 1N4448WSRR with alternatives