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1N4448WRP vs S-LBAT46T1G feature comparison

1N4448WRP Taiwan Semiconductor

Buy Now Datasheet

S-LBAT46T1G LRC Leshan Radio Co Ltd

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD LESHAN RADIO CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.4 W
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.004 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description R-PDSO-G2
Reference Standard AEC-Q101
Technology SCHOTTKY
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

Compare 1N4448WRP with alternatives

Compare S-LBAT46T1G with alternatives