1N4448W-G vs 1N4448W-T feature comparison

1N4448W-G Sangdest Microelectronics (Nanjing) Co Ltd

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1N4448W-T Rectron Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD RECTRON LTD
Package Description R-PDSO-G2 R-PDSO-G2
Reach Compliance Code unknown compliant
Application GENERAL PURPOSE FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.5 W 0.4 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 2
Pbfree Code Yes
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.70
Forward Voltage-Max (VF) 1.25 V
JESD-609 Code e3
Non-rep Pk Forward Current-Max 4 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 2.5 µA
Reverse Test Voltage 75 V
Terminal Finish MATTE TIN

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