1N4448W-13 vs 1N4448W-GT1 feature comparison

1N4448W-13 Diodes Incorporated

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1N4448W-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-G2 R-PDSO-G2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 2
Moisture Sensitivity Level 1

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