1N4448TR
vs
1N4448136
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
NXP SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-PALF-W2
O-LALF-W2
JESD-609 Code
e0
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Output Current-Max
0.15 A
0.2 A
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
75 V
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
5
1
Package Description
O-LALF-W2
Application
GENERAL PURPOSE
Forward Voltage-Max (VF)
1 V
Non-rep Pk Forward Current-Max
4 A
Operating Temperature-Max
200 °C
Power Dissipation-Max
0.5 W
Reverse Current-Max
0.025 µA
Compare 1N4448TR with alternatives
Compare 1N4448136 with alternatives