1N4448PBFREE
vs
1N4449FV
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
ROHM CO LTD
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
GENERAL PURPOSE
Breakdown Voltage-Min
75 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JEDEC-95 Code
DO-35
JESD-30 Code
O-PALF-W2
O-LALF-W2
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
2 A
2 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
200 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
0.15 A
0.15 A
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.5 W
0.5 W
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
0.025 µA
5 µA
Reverse Test Voltage
20 V
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Package Description
O-LALF-W2
Qualification Status
Not Qualified
Reverse Recovery Time-Max
0.004 µs
Compare 1N4448PBFREE with alternatives
Compare 1N4449FV with alternatives