1N4448153 vs 1N4448-A feature comparison

1N4448153 NXP Semiconductors

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1N4448-A Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer NXP SEMICONDUCTORS DIODES INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 4 A 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Output Current-Max 0.2 A 0.15 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Current-Max 0.025 µA 5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount NO NO
Terminal Finish TIN Matte Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
Pbfree Code No
Part Package Code DO-35
Package Description ROHS COMPLIANT, GLASS PACKAGE-2
Pin Count 2
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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Compare 1N4448-A with alternatives