1N4448-T
vs
1N4448-G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
DIODES INC
|
SENSITRON SEMICONDUCTOR
|
Part Package Code |
DO-35
|
DO-35
|
Package Description |
ROHS COMPLIANT, GLASS PACKAGE-2
|
O-LALF-W2
|
Pin Count |
2
|
2
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.70
|
8541.10.00.70
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.72 V
|
|
JEDEC-95 Code |
DO-35
|
DO-35
|
JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Pk Forward Current-Max |
1 A
|
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
200 °C
|
Output Current-Max |
0.15 A
|
0.15 A
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
260
|
|
Power Dissipation-Max |
0.5 W
|
0.5 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Matte Tin (Sn)
|
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
2
|
2
|
Pbfree Code |
|
Yes
|
Additional Feature |
|
HIGH RELIABILITY
|
Operating Temperature-Min |
|
-65 °C
|
|
|
|
Compare 1N4448-T with alternatives
Compare 1N4448-G with alternatives