1N4446
vs
1N4446136
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
TOSHIBA CORP
|
NXP SEMICONDUCTORS
|
Part Package Code |
DO-35
|
|
Package Description |
DO-35, 2 PIN
|
O-LALF-W2
|
Pin Count |
2
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.70
|
8541.10.00.70
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1 V
|
1 V
|
JEDEC-95 Code |
DO-35
|
DO-35
|
JESD-30 Code |
O-XALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e0
|
|
Non-rep Pk Forward Current-Max |
2 A
|
4 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Output Current-Max |
0.15 A
|
0.2 A
|
Package Body Material |
UNSPECIFIED
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
37
|
1
|
Application |
|
GENERAL PURPOSE
|
Power Dissipation-Max |
|
0.5 W
|
Reverse Current-Max |
|
0.025 µA
|
|
|
|
Compare 1N4446 with alternatives
Compare 1N4446136 with alternatives