1N4169BTIN/LEAD
vs
1N4747A-G
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Date Of Intro |
2018-07-13
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
22 Ω
|
|
| Forward Voltage-Max (VF) |
1.2 V
|
|
| JEDEC-95 Code |
DO-41
|
DO-41
|
| JESD-30 Code |
O-PALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Knee Impedance-Max |
750 Ω
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Voltage-Nom |
20 V
|
20 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Test Voltage |
15.2 V
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Voltage Temp Coeff-Max |
18 mV/°C
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
12.5 mA
|
12.5 mA
|
| Base Number Matches |
1
|
8
|
| Package Description |
|
O-LALF-W2
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N4169BTIN/LEAD with alternatives
Compare 1N4747A-G with alternatives