1N4153TR vs 1N4448WSG feature comparison

1N4153TR Central Semiconductor Corp

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1N4448WSG Galaxy Microelectronics

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-35
JESD-30 Code O-PALF-W2 R-PDSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.002 µs 0.004 µs
Surface Mount NO YES
Terminal Finish TIN LEAD
Terminal Form WIRE GULL WING
Terminal Position AXIAL DUAL
Base Number Matches 2 2
Application FAST RECOVERY
Breakdown Voltage-Min 75 V
Forward Voltage-Max (VF) 1.25 V
Non-rep Pk Forward Current-Max 0.5 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 0.2 W
Reverse Current-Max 2.5 µA
Reverse Test Voltage 75 V

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