1N4153T-83 vs JAN1N4153 feature comparison

1N4153T-83 ROHM Semiconductor

Buy Now Datasheet

JAN1N4153 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ROHM CO LTD MICROSEMI CORP
Package Description O-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature HIGH RELIABILITY METALLURGICALLY BONDED
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.88 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Pk Forward Current-Max 2 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V
Reverse Current-Max 0.05 µA
Reverse Recovery Time-Max 0.002 µs 0.004 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 5
Rohs Code No
JESD-609 Code e0
Reference Standard MIL-19500/337
Terminal Finish TIN LEAD

Compare 1N4153T-83 with alternatives

Compare JAN1N4153 with alternatives