1N4152
vs
1N4152
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
compliant
unknown
Application
GENERAL PURPOSE
FAST RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.81 V
0.88 V
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-XALF-W2
O-XALF-W2
Non-rep Pk Forward Current-Max
0.5 A
1 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
200 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
0.2 A
0.15 A
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
40 V
40 V
Reverse Current-Max
0.05 µA
0.05 µA
Reverse Recovery Time-Max
0.002 µs
0.004 µs
Reverse Test Voltage
30 V
30 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
12
Pbfree Code
Rohs Code
ECCN Code
EAR99
HTS Code
8541.10.00.70
Breakdown Voltage-Min
40 V
JESD-609 Code
e0
Power Dissipation-Max
0.5 W
Terminal Finish
Tin/Lead (Sn/Pb)
Compare 1N4152 with alternatives
Compare 1N4152 with alternatives