1N4151
vs
1N4151#N/A
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INTERNATIONAL COMPONENTS CORP
|
CENTRAL SEMICONDUCTOR CORP
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1 V
|
1 V
|
JESD-609 Code |
e0
|
e0
|
Non-rep Pk Forward Current-Max |
2 A
|
1 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Output Current-Max |
0.15 A
|
0.15 A
|
Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
Reverse Recovery Time-Max |
0.002 µs
|
0.004 µs
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
Base Number Matches |
1
|
1
|
Package Description |
|
O-XALF-W2
|
HTS Code |
|
8541.10.00.70
|
Application |
|
FAST RECOVERY
|
Breakdown Voltage-Min |
|
75 V
|
Case Connection |
|
ISOLATED
|
Diode Element Material |
|
SILICON
|
JEDEC-95 Code |
|
DO-35
|
JESD-30 Code |
|
O-XALF-W2
|
Number of Terminals |
|
2
|
Operating Temperature-Min |
|
-65 °C
|
Package Body Material |
|
UNSPECIFIED
|
Package Shape |
|
ROUND
|
Package Style |
|
LONG FORM
|
Power Dissipation-Max |
|
0.5 W
|
Reverse Current-Max |
|
0.05 µA
|
Reverse Test Voltage |
|
50 V
|
Terminal Form |
|
WIRE
|
Terminal Position |
|
AXIAL
|
|
|
|