1N4150-1
vs
1N4149
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
BKC SEMICONDUCTORS INC
ITT SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
200 °C
Output Current-Max
0.2 A
0.15 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.5 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
75 V
100 V
Reverse Current-Max
0.1 µA
0.025 µA
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
3
ECCN Code
EAR99
HTS Code
8541.10.00.70
Non-rep Pk Forward Current-Max
2 A
Compare 1N4150-1 with alternatives
Compare 1N4149 with alternatives