1N4150
vs
1N4150W-V-GS08
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
HITANO ENTERPRISE CORP
|
VISHAY SEMICONDUCTORS
|
| Package Description |
DO-35, 2 PIN
|
R-PDSO-G2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-35
|
|
| JESD-30 Code |
O-XALF-W2
|
R-PDSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.2 A
|
0.2 A
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Power Dissipation-Max |
0.5 W
|
0.41 W
|
| Rep Pk Reverse Voltage-Max |
50 V
|
50 V
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
AXIAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
63
|
2
|
| Pbfree Code |
|
Yes
|
| Pin Count |
|
2
|
| Samacsys Manufacturer |
|
Vishay
|
| Forward Voltage-Max (VF) |
|
1 V
|
| JESD-609 Code |
|
e3
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare 1N4150 with alternatives
Compare 1N4150W-V-GS08 with alternatives