1N4149S
vs
1SS307TE85R
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ITT SEMICONDUCTOR
|
TOSHIBA CORP
|
| Package Description |
O-LALF-W2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1.3 V
|
| JESD-30 Code |
O-LALF-W2
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
200 °C
|
125 °C
|
| Output Current-Max |
0.15 A
|
0.1 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.5 W
|
0.15 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Current-Max |
0.025 µA
|
0.01 µA
|
| Reverse Recovery Time-Max |
0.004 µs
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
AXIAL
|
DUAL
|
| Base Number Matches |
1
|
2
|
| Non-rep Pk Forward Current-Max |
|
1 A
|
| Number of Phases |
|
1
|
|
|
|
Compare 1N4149S with alternatives
Compare 1SS307TE85R with alternatives