1N4148UR-1
vs
LMBD6050LT3G
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
LESHAN RADIO CO LTD
|
| Package Description |
MELF-2
|
R-PDSO-G3
|
| Reach Compliance Code |
compliant
|
unknown
|
| Factory Lead Time |
22 Weeks
|
|
| Samacsys Manufacturer |
Microchip
|
|
| Additional Feature |
METALLURGICALLY BONDED
|
|
| Application |
SWITCHING
|
|
| Breakdown Voltage-Min |
100 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
0.7 V
|
| JEDEC-95 Code |
DO-213AA
|
|
| JESD-30 Code |
O-LELF-R2
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
|
| Non-rep Pk Forward Current-Max |
2 A
|
0.5 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Output Current-Max |
0.2 A
|
0.2 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
235
|
NOT SPECIFIED
|
| Reference Standard |
MIL-19500
|
|
| Rep Pk Reverse Voltage-Max |
75 V
|
70 V
|
| Reverse Current-Max |
0.5 µA
|
|
| Reverse Recovery Time-Max |
0.005 µs
|
0.004 µs
|
| Reverse Test Voltage |
75 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WRAP AROUND
|
GULL WING
|
| Terminal Position |
END
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
20
|
NOT SPECIFIED
|
| Base Number Matches |
10
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.70
|
| Power Dissipation-Max |
|
0.225 W
|
|
|
|
Compare 1N4148UR-1 with alternatives
Compare LMBD6050LT3G with alternatives