1N4134-1TRE3 vs JAN1N4134 feature comparison

1N4134-1TRE3 Microsemi Corporation

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JAN1N4134 Motorola Mobility LLC

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Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MOTOROLA INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 1200 Ω
JEDEC-95 Code DO-204AH DO-7
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 200 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.5 W 0.25 W
Reference Voltage-Nom 91 V 91 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 0.25 mA 0.25 mA
Base Number Matches 1 7
Package Description O-LALF-W2
Additional Feature LOW NOISE
Case Connection ISOLATED
Diode Element Material SILICON
Operating Temperature-Min -65 °C
Polarity UNIDIRECTIONAL
Qualification Status Not Qualified
Reverse Current-Max 0.01 µA
Technology ZENER

Compare 1N4134-1TRE3 with alternatives

Compare JAN1N4134 with alternatives