1N4004GHB0G
vs
1N4944-GT3
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.80
Samacsys Manufacturer
Taiwan Semiconductor
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Application
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JEDEC-95 Code
DO-204AL
DO-41
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
400 V
400 V
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
10
Base Number Matches
1
2
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Reverse Recovery Time-Max
0.15 µs
Compare 1N4004GHB0G with alternatives
Compare 1N4944-GT3 with alternatives