1N4003A1G
vs
1N4003-B
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
MICRO COMMERCIAL COMPONENTS
|
Package Description |
O-PALF-W2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Additional Feature |
HIGH RELIABILITY, LOW POWER LOSS
|
LOW LEAKAGE CURRENT
|
Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JEDEC-95 Code |
DO-41
|
DO-41
|
JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
125 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Output Current-Max |
1 A
|
1 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
PURE TIN
|
TIN LEAD
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
1
|
4
|
Forward Voltage-Max (VF) |
|
1.1 V
|
JESD-609 Code |
|
e0
|
Non-rep Pk Forward Current-Max |
|
30 A
|
Peak Reflow Temperature (Cel) |
|
240
|
Reverse Current-Max |
|
5 µA
|
Reverse Recovery Time-Max |
|
2 µs
|
Reverse Test Voltage |
|
200 V
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare 1N4003A1G with alternatives
Compare 1N4003-B with alternatives