1N4001G-KA0G
vs
1N4001GP/4-GSI-T30
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAITRON COMPONENTS INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Application
EFFICIENCY
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.1 V
JEDEC-95 Code
DO-204AL
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
30 A
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
NO
NO
Terminal Finish
TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Package Description
O-PALF-W2
Breakdown Voltage-Min
50 V
Reference Standard
MIL-S-19500
Reverse Recovery Time-Max
2 µs
Reverse Test Voltage
50 V
Compare 1N4001G-KA0G with alternatives
Compare 1N4001GP/4-GSI-T30 with alternatives