1N4001-GT3 vs MBR150 feature comparison

1N4001-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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MBR150 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description O-PALF-W2 GLASS PACKAGE-2
Reach Compliance Code unknown compliant
Additional Feature HIGH RELIABILITY LOW POWER LOSS
Application GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-LALF-W2
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Phases 1
Number of Terminals 2 2
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 14
Pbfree Code Yes
Part Package Code DO-41
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Operating Temperature-Max 125 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology SCHOTTKY
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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