1N4001 vs MBR150-GT3 feature comparison

1N4001 Toshiba America Electronic Components

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MBR150-GT3 Sensitron Semiconductors

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Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP SENSITRON SEMICONDUCTOR
Part Package Code DO-41 DO-41
Package Description GLASS PACKAGE-2 O-PALF-W2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-LALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Output Current-Max 1 A 1 A
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 50 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY
Moisture Sensitivity Level 1
Operating Temperature-Min -40 °C
Technology SCHOTTKY

Compare 1N4001 with alternatives

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