1N3900
vs
UES801
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.4 V
|
0.975 V
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Output Current-Max |
20 A
|
70 A
|
| Rep Pk Reverse Voltage-Max |
100 V
|
50 V
|
| Reverse Recovery Time-Max |
0.2 µs
|
0.05 µs
|
| Surface Mount |
NO
|
|
| Base Number Matches |
18
|
5
|
| Application |
|
GENERAL PURPOSE
|
| Diode Element Material |
|
SILICON
|
| Non-rep Pk Forward Current-Max |
|
800 A
|
| Operating Temperature-Min |
|
-55 °C
|
| Reverse Current-Max |
|
25 µA
|
|
|
|