1N3673RA
vs
JAN1N3673AE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ASI SEMICONDUCTOR INC
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
POWER
Case Connection
CATHODE
CATHODE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
2.3 V
2.3 V
JEDEC-95 Code
DO-4
DO-203AA
JESD-30 Code
O-MUPM-D1
O-MUPM-D1
Non-rep Pk Forward Current-Max
240 A
240 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
1
1
Operating Temperature-Max
200 °C
200 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
12 A
12 A
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
POST/STUD MOUNT
POST/STUD MOUNT
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Surface Mount
NO
NO
Terminal Form
SOLDER LUG
SOLDER LUG
Terminal Position
UPPER
UPPER
Base Number Matches
7
1
Package Description
O-MUPM-D1
Reference Standard
MIL-19500/260G
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
5 µs
Compare 1N3673RA with alternatives
Compare JAN1N3673AE3 with alternatives