1N3210R vs 1N250B feature comparison

1N3210R Semitronics Corp

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1N250B STMicroelectronics

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SEMITRONICS CORP STMICROELECTRONICS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application POWER GENERAL PURPOSE
Case Connection ANODE CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.5 V 1.5 V
JEDEC-95 Code DO-5
JESD-30 Code O-MUPM-D1 O-MUPM-D1
Non-rep Pk Forward Current-Max 250 A 450 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 1 1
Operating Temperature-Max 175 °C 175 °C
Output Current-Max 15 A 20 A
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style POST/STUD MOUNT POST/STUD MOUNT
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount NO NO
Terminal Form SOLDER LUG SOLDER LUG
Terminal Position UPPER UPPER
Base Number Matches 1 2
Additional Feature LEAKAGE CURRENT IS NOT AT 25 DEG C
Operating Temperature-Min -55 °C
Power Dissipation-Max 25 W
Reverse Current-Max 5000 µA

Compare 1N3210R with alternatives

Compare 1N250B with alternatives