1N3064HG vs JAN1N3064 feature comparison

1N3064HG ROHM Semiconductor

Buy Now Datasheet

JAN1N3064 TDK Micronas GmbH

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ROHM CO LTD ITT SEMICONDUCTOR
Package Description O-LALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Pk Forward Current-Max 2 A
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.15 A 0.075 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.002 µs 0.004 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 11
Additional Feature HIGH RELIABILITY

Compare 1N3064HG with alternatives

Compare JAN1N3064 with alternatives