1LE11
vs
BA159DZ
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
TOSHIBA CORP
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
1.3 V
|
| JESD-609 Code |
e0
|
|
| Non-rep Pk Forward Current-Max |
50 A
|
50 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
1
|
1
|
| Diode Element Material |
|
SILICON
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reverse Recovery Time-Max |
|
0.3 µs
|
|
|
|
Compare 1LE11 with alternatives
Compare BA159DZ with alternatives