1KSMB43AHM4 vs 1.0SMB43A feature comparison

1KSMB43AHM4 Taiwan Semiconductor

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1.0SMB43A YAGEO Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD YAGEO CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 45.2 V 45.2 V
Breakdown Voltage-Min 40.9 V 40.9 V
Breakdown Voltage-Nom 43.05 V 43.05 V
Clamping Voltage-Max 59.3 V 59.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1000 W 1000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard AEC-Q101 IEC-61000-4-2; MIL-STD-750
Rep Pk Reverse Voltage-Max 36.8 V 36.8 V
Reverse Current-Max 1 µA 1 µA
Reverse Test Voltage 36.8 V 36.8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 3
Date Of Intro 2018-11-05
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

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