1KSMB10CAHR4G vs 1KSMB10CATGHE3TRTB feature comparison

1KSMB10CAHR4G Taiwan Semiconductor

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1KSMB10CATGHE3TRTB Fagor Electrónica

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD FAGOR ELECTRONICA S COOP
Package Description SMB, 2 PIN
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max 10.5 V 10.5 V
Breakdown Voltage-Min 9.5 V 9.5 V
Breakdown Voltage-Nom 10 V 10 V
Clamping Voltage-Max 14.5 V 14.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1000 W 800 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard AEC-Q101 AEC-Q101
Rep Pk Reverse Voltage-Max 8.55 V 8.55 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 8 µA
Reverse Test Voltage 8.55 V
Time@Peak Reflow Temperature-Max (s) 40

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Compare 1KSMB10CATGHE3TRTB with alternatives