1F4G_AY_10001
vs
JANS1N5616
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
MICROSEMI CORP
|
| Package Description |
O-PALF-W2
|
HERMETIC SEALED, GLASS, A PACKAGE-2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.3 V
|
|
| JESD-30 Code |
O-PALF-W2
|
O-LALF-W2
|
| Non-rep Pk Forward Current-Max |
30 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
| Reverse Recovery Time-Max |
0.15 µs
|
2 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
6
|
| Pbfree Code |
|
No
|
| Additional Feature |
|
HIGH RELIABILITY
|
| JESD-609 Code |
|
e0
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL-19500
|
| Technology |
|
AVALANCHE
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 1F4G_AY_10001 with alternatives
Compare JANS1N5616 with alternatives