1F4G vs S1GLRV feature comparison

1F4G Galaxy Microelectronics

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S1GLRV Taiwan Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code R-1
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application FAST RECOVERY
Breakdown Voltage-Min 400 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.1 V
JESD-30 Code O-PALF-W2 R-PDSO-F2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.15 µs 1.8 µs
Reverse Test Voltage 400 V
Surface Mount NO YES
Terminal Form WIRE FLAT
Terminal Position AXIAL DUAL
Base Number Matches 10 1
Rohs Code Yes
Package Description ROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN
Additional Feature LOW POWER LOSS
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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