1A6
vs
1N4006GPPTIN/LEAD
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CONTINENTAL DEVICE INDIA LTD
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
compliant
not_compliant
Application
GENERAL PURPOSE
GENERAL PURPOSE
Breakdown Voltage-Min
800 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JESD-30 Code
O-PALF-W2
O-XALF-W2
Non-rep Pk Forward Current-Max
30 A
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Reference Standard
TS-16949
Rep Pk Reverse Voltage-Max
800 V
800 V
Reverse Current-Max
5 µA
5 µA
Reverse Test Voltage
800 V
800 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
37
1
Rohs Code
ECCN Code
EAR99
Date Of Intro
2018-01-30
JEDEC-95 Code
DO-41
JESD-609 Code
e0
Reverse Recovery Time-Max
2 µs
Terminal Finish
TIN LEAD
Compare 1A6 with alternatives
Compare 1N4006GPPTIN/LEAD with alternatives