19N10L-TM3-T
vs
19N10G-TN3-R
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
UNISONIC TECHNOLOGIES CO LTD
UNISONIC TECHNOLOGIES CO LTD
Part Package Code
TO-251
TO-252
Package Description
IN-LINE, R-PSIP-T3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
220 mJ
220 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
15.6 A
15.6 A
Drain-source On Resistance-Max
0.1 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251
TO-252
JESD-30 Code
R-PSIP-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
62.4 A
62.4 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare 19N10L-TM3-T with alternatives
Compare 19N10G-TN3-R with alternatives